Title: In situ determination of InGaAs and GaAsN composition in multiquantum-well structures

In situ determination of InGaAs and GaAsN composition in multiquantum-well structures

Characteristics of GaAsN/GaAsSb type-II quantum wells grown by metalorganic vapor phase epitaxy on GaAs substrates

Pseudomorphic four-period GaAs0.978N0.022/GaAs0.78Sb0.22 type-II multiquantum well structures were grown on 100 GaAs substrates by metalorganic vapor phase epitaxy at 530 °C. The GaAs0.978N0.022 layers were grown at a V/III ratio of 685 and N/V ratio of 0.96, whereas the GaAs0.78Sb0.22 was grown at a V/III ratio of 3.8 and Sb/V ratio of 0.8. The superlattice peaks in the x-ray diffraction -2 sc...

Determination of Original Gas Condensate Composition in The Case of Gas Coning

Obtaining samples that represent original fluid of reservoirs optimizes reservoirs management. The optimized management increases recovery. Also, selecting and performing proper Improved Oil Recovery (IOR) or Enhance Oil Recovery (EOR) programs depend on collecting representative samples. Achieving accurate compositions of original in-situ fluid prevents overdesigning surface facilities. Re...

A New Physical Modeling for Multiquantum Well Structure APD Considering Nonuniformity of Electric Field in Active Regin

In the present work we model a Multiquantum Well structure Separate Absorption and Charge Multiplication Avalanche Photodiode (MQW-SACM-APD), while the Absorption region coincide with the MQW. We consider the nonuniformity of electric field using split-step method in active region. This model is based on the carrier rate equations in the different regions of the device. Using the model we obtai...

Theoretical Studies of Polarization Dependent Electro-optical Modulation in Latticis Matched and Strained Multi-quantum Well Structures

We report on polarization dependent optical absorption for excitonic and interband transitions in lattice matched (GaAs/AlGaAs) and strained (biaxial tensile strain GaAsP/AlGaAs; biaxial compressive strain InGaAs/AlGaAs) multiquantum well structures in the presence of transverse electric fields. The hole states are solved by using the Kohn-Luttinger Hamiltonian and using an eigenvalue technique...